Humidity Sensors Based on Thin-Film and Field-Effect Transistors

Authored by: Ghenadii Korotcenkov

Handbook of Humidity Measurement

Print publication date:  February  2019
Online publication date:  January  2019

Print ISBN: 9781138300224
eBook ISBN: 9780203731888
Adobe ISBN:

10.1201/b22370-16

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Abstract

Devices based on the field-effect transistor (FET) and thin-film transistors offer a simple, efficient, and low-cost sensing platform for various applications, in particular for flexible electronics. This chapter shows that these devices can also be used for measuring humidity. To develop such sensors, one can use various approaches described in this chapter. The basis of such sensors is a semiconductor layer, the properties of which depend on the humidity of the air. As a rule, various organic semiconductors are used to form such layers. The mechanism of influence of humidity on the properties of such sensors is described. Approaches to optimize their parameters are also considered. It is shown that metal oxides and carbon nanotubes can also be used in such devices. The chapter also analyzes the advantages and disadvantages of using GasFETs for the development of humidity sensors. The methods of manufacturing such sensors are described.

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