Compact Modeling of SiGe HBTs

Authored by: Guofu Niu , Lan Luo

Extreme Environment Electronics

Print publication date:  November  2012
Online publication date:  November  2012

Print ISBN: 9781439874301
eBook ISBN: 9781439874318
Adobe ISBN:

10.1201/b13001-39

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Abstract

One of the remarkable characteristics of SiGe HBT is the ability to operate over a wide temperature range, from as low as sub 1 K [1] to as high as over 400 K. This, together with excellent total dose radiation tolerance, makes it very attractive for implementing space electronics that can operate over a wide temperature range in presence of radiation as found in space missions [2].

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