III-Nitride Platforms

Authored by: Shyh-Chiang Shen

Extreme Environment Electronics

Print publication date:  November  2012
Online publication date:  November  2012

Print ISBN: 9781439874301
eBook ISBN: 9781439874318
Adobe ISBN:

10.1201/b13001-29

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Abstract

III-Nitride (III-N) materials combine Column-III elements with nitrogen to provide a new device platform for microelectronic and optoelectronic applications to overcome several fundamental physics limitations for devices using conventional low-bandgap semiconductors. Commonly used III-N semiconductors include gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their ternary and quaternary alloys such as InGaN, InAlN, AlGaN, and AlInGaN. As shown in Figure 24.1, III-N semiconductors cover wide ranges of bandgap energy from 0.7 eV (for InN) to 6.2 eV (for AlN). Advanced growth of III-N materials can be achieved using novel epitaxial technologies such as molecular beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), or hydride vapor phase epitaxy (HVPE). Versatile wide-bandgap quantum mechanical structures are commonly seen in III-N devices through the bandgap engineering.

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