Spin Transport in Organic Semiconductors

Authored by: Valentin Dediu , Luis E. Hueso , Ilaria Bergenti

Handbook of Spin Transport and Magnetism

Print publication date:  August  2011
Online publication date:  April  2016

Print ISBN: 9781439803776
eBook ISBN: 9781439803783
Adobe ISBN:

10.1201/b11086-27

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Abstract

Recently, spintronics has expanded its choice of materials to the organic semiconductors (OSCs) [13]. OSCs offer unique properties toward their integration with spintronics, the main one being the weakness of the spin-scattering mechanisms in OSC. Spin–orbit coupling is very small in most OSCs; carbon has a low atomic number (Z) and the strength of the spin–orbit interaction (SOI) is in general proportional to Z4 [4]. Typical SOI values in OSC are less/about a few meV [5], well below any other characteristic energy, including main vibrational modes. Small spin–orbit coupling implies that the spin polarization of the carriers could be maintained for a very long time. Indeed, spin relaxation times in excess of 10 μs have been detected by various resonance techniques [6,7], and these values compare very favorably (at least 103 times larger) with those obtained with high-performing inorganic semiconductors, such as GaAs [8].

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