III–V Magnetic Semiconductors

Authored by: Carsten Timm

Handbook of Spin Transport and Magnetism

Print publication date:  August  2011
Online publication date:  April  2016

Print ISBN: 9781439803776
eBook ISBN: 9781439803783
Adobe ISBN:

10.1201/b11086-24

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Abstract

This chapter discusses the properties of III–V diluted magnetic semiconductors (DMS) and their current theoretical understanding. By DMS we mean semiconducting compounds doped with magnetic ions and showing ferromagnetic order below some Curie temperature TC . Due to the semiconducting properties of DMS, the carrier concentration can be changed significantly by doping and even in situ by the application of a gate voltage or by optical excitations. Since the carriers couple strongly to the magnetic moments, this leads to unique properties and makes DMS promising for spintronics. In particular, magnetotransport effects in DMS tunnel junctions and DMS quantum dots are discussed in Chapters 21 and 30, respectively. The strong spin–orbit coupling in most DMS is responsible for the anomalous Hall effect discussed in Chapter 25.

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