Spin-Polarized Ballistic Hot-Electron Injection and Detection in Hybrid Metal–Semiconductor Devices

Authored by: Ian Appelbaum

Handbook of Spin Transport and Magnetism

Print publication date:  August  2011
Online publication date:  April  2016

Print ISBN: 9781439803776
eBook ISBN: 9781439803783
Adobe ISBN:

10.1201/b11086-23

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Abstract

The spin-injection and detection limitations posed by conductivity and lifetime mismatch between semiconductors and ferromagnetic (FM) metals have been variously solved by lifting the constraints of ohmic transport with the insertion of a tunnel barrier [1] or the use of FM semiconductors [2,3]. However, for many semiconductors, there are other material-dependent obstacles to the observation of spin transport. The material properties of silicon (Si), for instance, pose problems such as alloy formation at metallic contacts and difficulties with the use of optical methods for spin detection due to indirect bandgap [4,5].

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