Tunneling Magnetoresistance: Theory

Authored by: Kirill D. Belashchenko , Evgeny Y. Tsymbal

Handbook of Spin Transport and Magnetism

Print publication date:  August  2011
Online publication date:  April  2016

Print ISBN: 9781439803776
eBook ISBN: 9781439803783
Adobe ISBN:

10.1201/b11086-16

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Abstract

Tunneling magnetoresistance (TMR) is a change of the electrical resistance of a magnetic tunnel junction (MTJ) under the influence of an external magnetic field. An MTJ is a tunnel junction with two magnetic metals serving as electrodes; the resistance change occurs when the orientation of the electrode magnetizations is switched between parallel and antiparallel configurations (see Chapter 10). In this respect, TMR is similar to the giant magnetoresistance (GMR) effect, where the magnetic electrodes are separated by a nonmagnetic metal, rather than an insulating barrier (see Chapters 4 and 5 for the reviews on GMR).

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