Bipolar Junction Transistor

Authored by: Bogdan M. Wilamowski , Guofu Niu

The Industrial Electronics Handbook

Print publication date:  March  2011
Online publication date:  April  2016

Print ISBN: 9781439802793
eBook ISBN: 9781439802809
Adobe ISBN:

10.1201/b10602-12

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Abstract

The bipolar junction transistor (BJT) is historically the first solid-state analog amplifier and digital switch, and formed the basis of integrated circuits (ICs) in the 1970s [6]. Starting in the early 1980s, the MOSFET had gradually taken over; particularly for mainstream digital ICs. However, in the 1990s, the invention of silicon–germanium base heterojunction bipolar transistor (SiGe HBT) brought the bipolar transistor back into high-volume commercial production, mainly for the now widespread wireless and wire line communications applications. Today, SiGe HBTs are used to design radio-frequency (RF) ICs and systems for cell phones, wireless local area network (WLAN), automobile collision avoidance radar, wireless distribution of cable television, millimeter wave radios, and many more applications, due to its outstanding high-frequency performance and ability to integrate with CMOS for realizing digital, analog, and RF functions on the same chip.

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