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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Chapter 1: Introduction | Download PDF |
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Chapter 2: Properties of Semiconductors | Download PDF |
Chapter 3: Heteroepitaxial Growth | Download PDF |
Chapter 4: Surface and Chemical Considerations in Heteroepitaxy | Download PDF |
Chapter 5: Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers | Download PDF |
Chapter 6: Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures | Download PDF |
Chapter 7: Characterization of Heteroepitaxial Layers | Download PDF |
Chapter 8: Defect Engineering in Heteroepitaxial Material | Download PDF |
Chapter 9: Metamorphic Devices | Download PDF |
Appendix1 | Download PDF |
Appendix5 | Download PDF |
Appendix7 | Download PDF |
Appendix3 | Download PDF |
prelims | Download PDF |
Appendix8 | Download PDF |
Appendix4 | Download PDF |
Appendix6 | Download PDF |
Appendix2 | Download PDF |