III-Nitride Electronic Devices for Harsh Environments

Authored by: Shyh-Chiang Shen

Semiconductor Devices in Harsh Conditions

Print publication date:  November  2016
Online publication date:  November  2016

Print ISBN: 9781498743808
eBook ISBN: 9781315368948
Adobe ISBN:

10.1201/9781315368948-7

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Abstract

III-nitride (III-N) materials offer the flexibility of using various compositions of Group III elements (e.g. In, Al and Ga) and the nitrogen in a semiconductor system, which has great potential for next-generation harsh environment applications. Commonly used III-N semiconductors include gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN) and their ternary and quaternary alloys, such as InGaN, InAlN, AlGaN and AlInGaN. They are known to have direct-energy bandgap, comparable thermal conductivity, chemical inertness and high electron mobility.

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