Graphene Nanoribbon-Based Through Silicon Vias

Authored by: Brajesh Kumar Kaushik , Vobulapuram Ramesh Kumar , Manoj Kumar Majumder , Arsalan Alam

Through Silicon Vias

Print publication date:  August  2016
Online publication date:  November  2016

Print ISBN: 9781498745529
eBook ISBN: 9781315368825
Adobe ISBN:

10.1201/9781315368825-7

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Abstract

The use of through silicon via (TSV)-based three-dimensional integrated circuits (3D ICs) has become inevitable in the chip and packaging industry in order to continue meeting the demands of enhanced state-of-the-art electronic products. The TSVs play a major role in bringing out the benefits of 3D integration. Continuous improvements should be carried out in order to maintain TSV-based 3D ICs as a packaging technique that can cater the needs of the current- and the next-generation electronic devices. The properties of a TSV are mainly dependent on the type of filler material used. Currently, Cu is the most commonly used filler material in TSVs [1]. However, graphene-based carbon nanotubes (CNTs) have demonstrated better electrical, thermal, and physical properties compared to Cu [2]. Encouragingly, CNT-based TSVs have shown improved performance in terms of delay, power dissipation, and bandwidth compared to Cu-based TSVs. These improved results suggest that the CNTs have potential to replace Cu as a filler material in future 3D TSVs.

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