Dielectric Films for NVM Devices

Authored by: Arup Bhattacharyya

Silicon Based Unified Memory Devices and Technology

Print publication date:  June  2017
Online publication date:  July  2017

Print ISBN: 9781138032712
eBook ISBN: 9781315206868
Adobe ISBN:

10.1201/9781315206868-5

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Abstract

Chapter Outline

It should be apparent now that thin dielectric films play a critical role in silicon based NVM devices. We will review some of the most important properties of the dielectric films investigated for NVM applications in greater detail. We will group several selected dielectric films into three groups: (1) conventional dielectric films, (2) common high K dielectric films, and (3) future high K dielectric films. This chapter provides an in-depth discourse on key properties of thin conventional dielectric films for NVM device applications. These include thin films of silicon-di-oxide (SiO2), silicon nitride (Si3N4), different compositions of silicon oxynitrides (SiONs), and silicon-rich insulators such as silicon-rich oxides (SROs) and silicon-rich nitrides (SRNs) employed in gate stack designs for NVM devices prior to the incorporation of higher K dielectric films. Higher K dielectric thin films for NVM devices are discussed in Parts II and III of this book.

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