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High K Dielectric Films for NVM

Authored by: Arup Bhattacharyya

Silicon Based Unified Memory Devices and Technology

Print publication date:  June  2017
Online publication date:  July  2017

Print ISBN: 9781138032712
eBook ISBN: 9781315206868
Adobe ISBN:

10.1201/9781315206868-14

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Abstract

Chapter Outline

The importance of high K dielectric films in NVM stack designs to derive enhanced NVM device properties has been discussed in Chapters 4 and 5 in Part I. General properties of select high K films of interest in NVM applications have also been discussed in Chapter 3 in Part I. In this chapter, we will discuss in greater detail of the characteristics of (A) common high K dielectric films and (B) potential high K dielectric films. We will review current and future application potentials of dielectric films of groups (A) and (B) in scaled CMOS technology and NVM device stack designs. After the introductory Sections of 12.1 and 12.2, this chapter is essentially divided into two inter-related segments. The first segment from Sections 12.3 through 12.14 reviews published characteristics of select high K films from the standpoint of replacing oxide and oxynitride gate dielectrics for scaled CMOS FET devices. The second segment from Sections 12.15 through 12.24 focuses on applicability of such high K film characteristics for the NVM device stack designs.

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