Quantum Disk Nanowire Light-Emitting Diodes

Authored by: Fabio Sacconi

Handbook of Optoelectronic Device Modeling and Simulation

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498749466
eBook ISBN: 9781315152301
Adobe ISBN:

10.1201/9781315152301-17

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Abstract

Due to their properties, nanowire (NW) based light-emitting diode (LED) structures offer very interesting advantages, such as defect-free material, due to small footprint on the substrate, which allows higher LED efficiency, and three-dimensional (3D) geometry features, such as lateral strain relaxation, which can also be exploited to increase efficiency (Ristic et al., 2005). Group III nitride semiconductors have attracted much attention for quite a long time especially for their light-emitting device applications. A new approach for reaching exceptionally high efficiencies of LEDs for the whole visible spectrum is therefore based on nanostructured InGaN emitters, where nanorods, which have been shown to be defect-free, serve as active light-emitting structures. Light-emitting nanorod arrays based on InGaN as a material for the active region have been investigated (Kim et al., 2004); in principle they could cover the whole visible spectrum from blue to red and be incorporated into a single device for phosphor-free white light emission. By controlling indium content in the InGaN quantum disk (QD) embedded in the NW, nanorod emitters are expected to exhibit efficient green, yellow, and red emission, allowing coverage of the full visible spectrum with GaN-based LEDs. This could overcome a major drawback of today's red-green-blue (RGB) light sources, that is, the lack of an efficient green emitter due to the efficiency gap existing between the blue InGaN and the red InGaAlP materials system (Piprek, 2010).

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