III-Nitride Metalorganic Vapor-Phase Epitaxy

Authored by: Daniel D. Koleske

Handbook of GaN Semiconductor Materials and Devices

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498747134
eBook ISBN: 9781315152011
Adobe ISBN:

10.1201/9781315152011-6

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Abstract

This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride materials. Emphasis is placed on the chemistry, growth mechanisms, and materials properties that transformed III-N MOVPE growth from a backwater research topic in the early 1980s to bright blue LEDs in the 1990s; ultimately leading to the solid-state lighting revolution of today. This article includes descriptions of the heteroepitaxial GaN growth process, in-situ monitoring of growth, n- and p-type doping, and alloy growth necessary for LED-based devices. While it is widely believed that blue LED technology has been mastered, several remaining areas of research are posed in the conclusion section.

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