Electronic and Transport Properties of III-Nitride Semiconductors

Authored by: Yuh-Renn Wu

Handbook of GaN Semiconductor Materials and Devices

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498747134
eBook ISBN: 9781315152011
Adobe ISBN:

10.1201/9781315152011-4

 Download Chapter

 

Abstract

The III-nitride semiconductors have become one of the most important semiconductors in the world due to the rapid growth of solid state lighting, laser, and power electronic applications [1–14]. The III-nitrides including alloys of AlN, InN, and GaN are direct bandgap materials, which span the entire visible emission spectrum including Deep UV to infrared wavelength. Besides the excellent electronic properties, the GaN and AlN have a relatively wider bandgap and very good thermal properties and a reasonable electron effective mass, which make them very suitable for power electronic applications [15–25]. In this chapter, we will introduce the basic electronic properties of nitride-based materials.

 Cite
Search for more...
Back to top

Use of cookies on this website

We are using cookies to provide statistics that help us give you the best experience of our site. You can find out more in our Privacy Policy. By continuing to use the site you are agreeing to our use of cookies.