Internal Quantum Efficiency for III-Nitride–Based Blue Light-Emitting Diodes

Authored by: Zi-Hui Zhang , Yonghui Zhang , Hilmi Volkan Demir , Xiao Wei Sun

Handbook of GaN Semiconductor Materials and Devices

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498747134
eBook ISBN: 9781315152011
Adobe ISBN:

10.1201/9781315152011-13

 Download Chapter

 

Abstract

The III-nitride light-emitting diodes (LEDs) have popularly penetrated into the market of the visible light communication, lighting, sensing, and display illumination [1,2]. It is well known that the III-nitride LED-based white-lighting source is able to yield the efficacy much higher than those traditional light sources such as the incandescent light bulbs by more than 15 times, which therefore, leads to a yearly reduction of the CO2 emission by 1900 Mt [1], and makes significant contribution to relieve the global warming effect. Additionally, compared to the mercury-based fluorescent light tubes, the III-nitride solid-state lighting source produces no pollutions. As a result, the III-nitride–based solid-state lighting has attracted intense global interest and is regarded as the ultimate lighting solution in this century.

 Cite
Search for more...
Back to top

Use of cookies on this website

We are using cookies to provide statistics that help us give you the best experience of our site. You can find out more in our Privacy Policy. By continuing to use the site you are agreeing to our use of cookies.