Reliability in III-Nitride Devices

Authored by: Davide Bisi , Isabella Rossetto , Matteo Meneghini , Gaudenzio Meneghesso , Enrico Zanoni

Handbook of GaN Semiconductor Materials and Devices

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498747134
eBook ISBN: 9781315152011
Adobe ISBN:

10.1201/9781315152011-12

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Abstract

III-nitrides are very promising compound semiconductors which attracted strong attention for both microwave and power switching applications. The electrical properties, namely the high carrier mobility and current density, the outstanding breakdown field and the possibility of operating at very high temperature, make this material very suitable for the fabrication of the next generation of microwave, millimeter-wave, and power switching devices.

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