III-Nitride Materials and Characterization

Authored by: Bo Shen , Ning Tang , XinQiang Wang , ZhiZhong Chen , FuJun Xu , XueLin Yang , TongJun Yu , JieJun Wu , ZhiXin Qin , WeiYing Wang , YuXia Feng , WeiKun Ge

Handbook of GaN Semiconductor Materials and Devices

Print publication date:  October  2017
Online publication date:  October  2017

Print ISBN: 9781498747134
eBook ISBN: 9781315152011
Adobe ISBN:

10.1201/9781315152011-1

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Abstract

Semiconductor materials and devices play a major role in science and technology of modern society. Historically, there would neither be microelectronic technique and industry without the development of silicon material and an integrated circuit, nor optical communication, mobile communication, and digital high-speed information network technology without the development of compound semiconductor materials such as GaAs and InP. Today, driven by the demand from highly advanced science and technology, the semiconductor material system has evolved into a new era of the third generation, represented by III-nitride wide gap semiconductors which have become one of the predominant areas of modern semiconductor science and technology.

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