Tunneling Magnetoresistance

Theory

Authored by: Kirill D. Belashchenko , Evgeny Y. Tsymbal

Spintronics Handbook: Spin Transport and Magnetism, Second Edition

Print publication date:  May  2019
Online publication date:  May  2019

Print ISBN: 9781498769525
eBook ISBN: 9780429423079
Adobe ISBN:

10.1201/9780429423079-13

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Abstract

Tunneling magnetoresistance (TMR) is a change of the electrical resistance of a magnetic tunnel junction (MTJ) under the influence of an external magnetic field. An MTJ is a tunnel junction with two magnetic metals serving as electrodes; the resistance change occurs when the orientation of the electrode magnetizations is switched between parallel and antiparallel configurations (see Chapters 11 and 12, Volume 1). In this respect, TMR is similar to the giant magnetoresistance (GMR) effect, where the magnetic electrodes are separated by a nonmagnetic metal, rather than an insulating barrier (see Chapters 4 and 5 for the reviews on GMR).

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