Tunneling Magnetoresistance

Experiment (Non-MgO)

Authored by: Patrick R. LeClair , Jagadeesh S. Moodera

Spintronics Handbook: Spin Transport and Magnetism, Second Edition

Print publication date:  May  2019
Online publication date:  May  2019

Print ISBN: 9781498769525
eBook ISBN: 9780429423079
Adobe ISBN:

10.1201/9780429423079-11

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Abstract

Tunneling magnetoresistance (TMR) is a consequence of spin-dependent tunneling, and in a broader sense, another manifestation of spin-dependent transport related to the giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects. Spin-dependent tunneling between two ferromagnets, an outgrowth of earlier work by Meservey and Tedrow, [1] was first proposed [2] and observed [3] in 1975, but it was reliably demonstrated only in 1995 [4, 5]. In the past two decades, magnetic tunnel junctions (MTJs) have aroused considerable interest due to their suitability for applications in spin-electronic devices and indeed have found applications in hard disk read heads and magnetic random access memories (MRAMs). The diversity of the physical phenomena governing the operation of these magnetoresistive devices also makes MTJs very attractive from the fundamental physics point of view. These facts have recently stimulated tremendous activity in both the experimental and theoretical realms of investigation, with a view to understand and manipulate the electronic, magnetic and transport properties of MTJs.

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